AP2N65MSI

650V N-Channel Enhancement Mode MOSFET

AP2N65MSI REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

650

685

--

V

VGS(th)

Gate-Source Threshold Voltage

VDS = VGS, ID = 250µA

2.0

3.0

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS = 10V, ID = 0.5A

--

4.5

6.5

Ω

IDSS

Zero Gate Voltage Drain Current

VDS=650V, VGS = 0V, TJ = 25ºC

--

--

1

μA

VDS=520V, VGS = 0V, TJ = 125ºC

--

--

100

IGSS

Gate-Source Leakage

VGS = ±30V

--

--

±100

nA

Ciss

Input Capacitance

VGS = 0V,

VDS=25V, f=1.0MHz

--

310

--

pF

Coss

Output Capacitance

--

39

--

Crss

Reverse Transfer Capacitance

--

6.0

--

Qg

Total Gate Charge

VDD=300V, ID=2.0A, VGS=10V

--

8.0

--

nC

Qgs

Gate-Source Charge

--

1.2

--

Qgd

Gate-Drain Charge

--

5.0

--

td(on)

Turn-on Delay Time

VDD=300V, ID=2.0A, RG=25Ω

--

7.8

--

ns

tr

Turn-on Rise Time

--

3.3

--

td(off)

Turn-off Delay Time

--

23

--

tf

Turn-off Fall Time

--

59

--

IS

Continuous Body Diode Current

TC=25ºC

--

--

2.0

A

ISM

Pulsed Diode Forward Current

--

--

6.0

trr

Reverse Recovery Time

VGS = 0V,IS=2.0A, diF/dt =100A /μs

--

80

--

ns

Qrr

Reverse Recovery Charge

--

1.8

--

μC

VSD

Body Diode Voltage

TJ = 25ºC, ISD =0.8A, VGS = 0V

--

--

1.5

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The test condition is Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.