 |
数据搜索系统，热门电子元器件搜索 |
|
|
数据搜索系统，热门电子元器件搜索 |
|
AP2N7002AI 数据表(PDF) 1 Page - A POWER MICROELECTRONICS |
|
|
|||||||||||||||||||||||||||||
AP2N7002AI 数据表(HTML) 1 Page - A POWER MICROELECTRONICS |
|
|
1 / 7 page  60V N-Channel Enhancement Mode MOSFET Package Marking and Ordering Information Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (TJ =150℃) TA =25℃ ID 0.3 A TA =100℃ 0.19 Drain Current-Pulsed (Note 1) IDM 0.8 A Maximum Power Dissipation PD 0.35 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 350 ℃ /W AP2N7002AI Description The AP2N7002AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =0.3A RDS(ON) < 3Ω @ VGS=10V ESD Rating：HBM≥2000V Application Battery protection Load switch Uninterruptible power supply 72K AP2N7002AI Product ID Pack SOT23L Marking Qty(PCS) 3000 AP2N7002AI Rve3.8 永源微電子科技有限公司 |
类似零件编号 - AP2N7002AI |
|
类似说明 - AP2N7002AI |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Chinese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
