AP2P03DW

-30V P-Channel Enhancement Mode MOSFET

AP2P03DW REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= -250μA

-30

-35

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS= 0V

-

-

-1

μA

IGSS

Gate-Source Leakage

VDS= 0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate-Source Threshold Voltage

VDS= VGS, ID= 250μA

-1.0

-1.5

-2.5

V

RDS(on)

Drain-Source On-State Resistance3

VGS= -10V,ID= -2.7A

-

80

100

mΩ

VGS= -4.5V,ID= -2.5A

-

95

140

Ciss

Input Capacitance

VGS= 0V , VDS = -15V,

f=1MHz

-

345

-

pF

Coss

Output Capacitance

-

47

-

Crss

Reverse Transfer Capacitance

-

35

-

Qg

Total Gate Charge

VGS= -4.5V，VDS= -

15V,

ID= -2.7A

-

5.5

-

nC

Qgs

Gate-Source Charge

-

1.1

-

Qgd

Gate-Drain Charge

-

1.2

-

td(on)

Turn-on Delay Time

VGS= -4.5V, VDD= -15V,

ID= -2.7A, RG=3Ω

-

36.8

-

ns

tr

Rise Time

-

37

-

td(off)

Turn-off delay time

-

19

-

tf

Fall Time

-

15.5

-

VSD

Body Diode Voltage3

IS= -1A,VGS=0V

-

-

-1.2

V

IS

Continuous Source Current

-

-

-

-2.7

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.