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AP3P06MI 数据表(PDF) 3 Page - A POWER MICROELECTRONICS |
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AP3P06MI 数据表(HTML) 3 Page - A POWER MICROELECTRONICS |
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3 / 7 page ![]() AP3P06MI -60V P-Channel Enhancement Mode MOSFET AP3P06MI RVE1.0 永源微電子科技有限公司 0 2 4 6 8 0 0.5 1 1.5 2 -VDS , Drain-to-Source Voltage (V) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-4V 75 110 145 180 215 2 4 6 8 10 -VGS (V) ID=-3A 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) TJ=150℃ TJ=25℃ 0 2.5 5 7.5 10 0 3.5 7 10.5 14 QG , Total Gate Charge (nC) VDS=-12V ID=-3A 0 0.5 1 1.5 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) 0.5 1.0 1.5 2.0 -50 25 100 175 TJ , Junction Temperature (℃) P-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics Of Reverse diode Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ |
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