AP4P05AI

-55V P-Channel Enhancement Mode MOSFET

AP4P05AI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25

℃ unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-55

-58

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.021

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-1.5A

---

115

150

mΩ

VGS=-4.5V , ID=-1A

---

135

160

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

1.6

-2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

4.08

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=-48V , VGS=0V , TJ=25

℃

---

---

1

uA

IDSS

VDS=-48V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-1.5A

---

5.9

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-1.5A

---

4.6

---

nC

Qgs

Gate-Source Charge

---

1.4

---

nC

Qgd

Gate-Drain Charge

---

1.62

---

nC

Td(on)

Turn-On Delay Time

VDS=-15V , VGS=-10V , RG=3.3Ω,

ID=-1A

---

17.4

---

ns

Tr

Rise Time

---

5.4

---

ns

Td(off)

Turn-Off Delay Time

---

37.2

---

ns

Tf

Fall Time

---

2.4

---

ns

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

531

---

pF

Coss

Output Capacitance

---

59

---

pF

Crss

Reverse Transfer Capacitance

---

38

---

pF

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

-1.7

A

ISM

Pulsed Source Current2,4

---

---

-7

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.