SM2T

3/6

Figure 1: Peak pulse power versus exponential

pulse duration

Figure 2: Relative variation of peak pulse

power versus initial junction temperature

Figure 3: Average power dissipation versus

ambient temperature

Figure 4: Variation of thermal impedance

junction to ambient versus pulse duration

Figure 5: Thermal resistance junction to

ambient versus copper surface under tab

Figure 6: Reverse leakage current versus

junction temperature (typical values)

1.E+01

1.E+02

1.E+03

1.E+04

0.01

0.10

1.00

10.00

P

(W)

PP

t (ms)

p

T initial = 25°C

j

0

10

20

30

40

50

60

70

80

90

100

110

0

25

50

75

100

125

150

175

%

T (°C)

j

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

25

50

75

100

125

150

Printed circuit board FR4, recommended pad layout

T

(°C)

AMB

P(W)

T=

AMB

0.1

1.0

10.0

100.0

1000.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

S=2cm²

S=0.135cm²

Z/R

th(j-c)

th(j-c)

t (s)

p

0

50

100

150

200

250

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

S(cm²)

R

(°C/W)

th(j-a)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

25

50

75

100

125

150

T (°C)

j

I (nA)

R

V= V

RRM