AP6P04MSI

-40V P-Channel Enhancement Mode MOSFET

AP6P04MSI REV1.0

永源微電子科技有限公司

Description

The AP6P04MSI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -40V ID =-6.0A

RDS(ON) < 72mΩ @ VGS=-10V （Type：65mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP6P04MSI

SOT223-3L

AP6P04MSI XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Steady State

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25℃

Continuous Drain Current, VGS @ -4.5V1

-5.0

A

ID@TA=70℃

Continuous Drain Current, VGS @ -4.5V1

-3.0

A

IDM

Pulsed Drain Current2

-16.1

A

PD@TA=25℃

Total Power Dissipation3

1.32

W

PD@TA=70℃

Total Power Dissipation3

0.84

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃

/W

RθJC

Thermal Resistance Junction-Case1

80

℃

/W