AP6P06MI

-60V P-Channel Enhancement Mode MOSFET

AP6P06MI RVE1.0

永源微電子科技有限公司

P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-60

---

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=-1mA

---

-0.03

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-3A

---

80

90

mΩ

VGS=-4.5V , ID=-2A

---

100

115

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-48V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=-48V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-3A

---

8.5

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-48V , VGS=-4.5V , ID=-3A

---

12.1

---

nC

Qgs

Gate-Source Charge

---

2.2

---

Qgd

Gate-Drain Charge

---

6.3

---

Td(on)

Turn-On Delay Time

VDD=-15V , VGS=-10V ,

RG=3.3 ,

ID=-1A

---

9.2

---

ns

Tr

Rise Time

---

20.1

---

Td(off)

Turn-Off Delay Time

---

46.7

---

Tf

Fall Time

---

9.4

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

1137

---

pF

Coss

Output Capacitance

---

76

---

Crss

Reverse Transfer Capacitance

---

50

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-13

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

-

1.75