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March 2000

M27V160

16 Mbit (2Mb x8 or 1Mb x16)

Low Voltage UV EPROM and OTP EPROM

s

3V to 3.6V LOW VOLTAGE in READ

OPERATION

s

ACCESS TIME: 100ns

s

BYTE-WIDE or WORD-WIDE

CONFIGURABLE

s

16 Mbit MASK ROM REPLACEMENT

s

LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Standby Current 60

µA

s

PROGRAMMING VOLTAGE: 12.5V

± 0.25V

s

PROGRAMMING TIME: 50

µs/word

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: B1h

DESCRIPTION

The M27V160 is a low voltage 16 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 2 Mbit

words of 8 bit or 1 Mbit words of 16 bit. The pin-out

is compatible with a 16 Mbit Mask ROM.

The M27V160 operates in the read mode with a

supply voltage as low as 3V. The decrease in op-

erating power allows either a reduction of the size

of the battery or an increase in the time between

battery recharges.

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

For applications where the content is programmed

only one time and erasure is not required, the

M27V160 is offered in PDIP42 and SO44 packag-

es.

44

1

1

42

1

42

FDIP42W (F)

SO44 (M)

PDIP42 (B)

Figure 1. Logic Diagram

AI01898

20

A0-A19

BYTEVPP

Q0-Q14

VCC

M27V160

G

E

VSS

15

Q15A–1