AP8G02BF

20V N+P-Channel Enhancement Mode MOSFET

AP8G02BF REV1.0

永源微電子科技有限公司

N-Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

20

22

V

△

BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25℃ , ID=1mA

---

0.018

---

V/℃

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.50

0.65

1.0

V

RDS(ON)

Static Drain-Source On-Resistance

VGS=4.5V, ID=4A

15

20

mΩ

RDS(ON)

Static Drain-Source On-Resistance

VGS=2.5V, ID=3A

20

35

IDSS

Zero Gate Voltage Drain Current

VDS=20V,VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±10V, VDS=0V

±100

nA

Ciss

Input Capacitance

VDS=10V,VGS=0V,f=1MHZ

888

pF

Coss

Output Capacitance

133

Crss

Reverse Transfer Capacitance

117

Qg

Total Gate Charge

VGS=4.5V,VDS=10V,ID=6.8A

11.05

nC

Qgs

Gate-Source Charge

1.73

Qgd

Gate-Drain Charge

3.1

tD(on)

Turn-on Delay Time

VGS=4.5V, VDS=10V,

ID=6.8A

RGEN=3Ω

7

ns

tr

Turn-on Rise Time

46

tD(off)

Turn-off Delay Time

30

tf

Turn-off fall Time

52

VSD

Diode Forward Voltage

IS=4A,VGS=0V

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.