AP8G02S

20V N+P-Channel Enhancement Mode MOSFET

AP8G02S REV1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Typ

Max

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-20

-24

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -20V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-0.4

-0.7

-1.0

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS= -4.5V, ID= -4.1A

-

28

35

mΩ

RDS(on)

Static Drain-Source on-Resistance note2

VGS= -2.5V, ID= -3A

-

35

42

mΩ

Ciss

Input Capacitance

VDS= -10V, VGS=0V,

f=1.0MHz

-

830

-

pF

Coss

Output Capacitance

-

132

-

pF

Crss

Reverse Transfer Capacitance

-

85

-

pF

Qg

Total Gate Charge

VDS= -10V, ID= -2A,

VGS= -4.5V

-

8.8

-

nC

Qgs

Gate-Source Charge

-

1.4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

1.9

-

nC

td(on)

Turn-on Delay Time

VDD= -10V, ID= -3.3A,

RG= 1Ω, VGEN= -4.5V

-

10

-

ns

tr

Turn-on Rise Time

-

32

-

ns

td(off)

Turn-off Delay Time

-

50

-

ns

tf

Turn-off Fall Time

-

51

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-4.1

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-16

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -4.1A

-

-

-1.2

V

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The power dissipation is limited by 150℃ junction temperature

4

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.