AP10H10DF

100V N+N-Channel Enhancement Mode MOSFET

AP10H10DF REV1.0

永源微電子科技有限公司

Description

The AP10H10DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =10.3A

RDS(ON) < 120mΩ @ VGS=10V (Type：88mΩ)

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP10H10DF

PDFN3*3-8L

AP10H10DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Drain Current, VGS @ 10V

10.3

A

ID@TC=100℃

Drain Current, VGS @ 10V

6.5

A

IDM

Pulsed Drain Current1

24.3

A

PD@TC=25℃

Total Power Dissipation

1.5

W

EAS

Single Pulse Avalanche Energy4

61

mJ

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

85

℃

/W

RθJC

Maximum Thermal Resistance, Junction-case

8.1

℃

/W