STP4N150 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STFV4N150 - STFW4N150 - STP4N150 - STW4N150

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Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown voltage

ID = 1 mA, VGS = 0

1500

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC = 125 °C

500

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 30 V

± 100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on

Static drain-source on

resistance

VGS = 10 V, ID = 2 A

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300 µs, duty cycle 1.5%

Forward transconductance

VDS = 30 V, ID = 2 A

3.5

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1300

120

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 750 V, ID = 2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 21)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 600 V, ID = 4 A,

VGS = 10 V

(see Figure 22)

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