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TS4431ILT 数据表(PDF) 4 Page - STMicroelectronics |
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TS4431ILT 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 8 page ![]() Electrical Characteristics TS4431 4/8 3 Electrical Characteristics Table 3. Electrical characteristics for Tamb = 25°C, VCC = 1.8V, ISINK = 2mA unless otherwise specified Note: Limits are 100% production tested at 25°C. Limits over temperature are guaranteed through correlation and by design. Symbol Parameter Test Condition Min. Typ. Max. Unit VREF Reference voltage TS4431A 0.5% 1.218 1.224 1.230 V -40°C < T < +85°C 1.209 1.239 VREF Reference voltage TS4431 1% 1.212 1.224 1.236 V -40°C < T < +85°C 1.203 1.245 TC Temperature coefficient 100 ppm/°C Change in VREF due to change in VCC VCC=1.5 to 10V 12 mV -40°C < T < +85°C 2 3 Change in VREF due to change in ISINK ISINK=0.5 to 20mA 710 mV -40°C < T < +85°C 15 ICC Supply current ISINK=2mA 250 300 µA -40°C < T < +85°C 350 IOFF OFF-State supply current Ref < 0.6V 15 20 µA -40°C < T < +85°C 30 IREF Reference input current 0.1< ISINK < 10mA 0.4 1 µA -40°C < T < +85°C 2 VSAT Output transistor saturation voltage ISINK=5mA 30 50 mV -40°C < T < +85°C 60 ISINK=20mA 90 100 -40°C < T < +85°C 120 IOH Output leakage current VSINK=VCC 0.05 µA -40°C < T < +85°C 0.1 ∆V REF ∆V CC ----------------- ∆V REF ∆I SIN K ----------------- |
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