AP20P02DF

-20V P-Channel Enhancement Mode MOSFET

AP20P30DF Rve3.8

臺灣永源微電子科技有限公司

The AP20P02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -20V ID =-20A

RDS(ON) < 9mΩ @ VGS=-10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP20P02DF

20P30

3000

Absolute Maximum Ratings (TA=25℃ unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±

8

V

ID@TC=25℃

Continuous Drain Current, VGS @ -4.5V1

-20

A

ID@TC=70℃

Continuous Drain Current, VGS @ -4.5V1

-18

A

IDM

Pulsed Drain Current2

-100

A

PD@TC=25℃

Total Power Dissipation3

29

W

PD@TC=70℃

Total Power Dissipation3

19

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

75

℃

/W

RθJA

Thermal Resistance Junction-Ambient 1 (t

≤10s)

40

℃

/W

RθJC

Thermal Resistance Junction-Case1

4.2

℃

/W

Description

PDFN3*3-8L