AP30G04GD

40V N+P-Channel Enhancement Mode MOSFET

AP30G04D REV1.0

永源微電子科技有限公司

Description

The AP30G04GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =33A

RDS(ON) < 18mΩ @ VGS=10V （Type：11mΩ）

VDS = -40V ID =-31A

RDS(ON) < 30mΩ @ VGS=10V （Type：24mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30G04GD

TO-252-4L

AP30G04GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

N-Ch

P-Ch

VDS

Drain-Source Voltage

40

-40

V

VGS

Gate-Source Voltage

±20

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

33

-31

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

23.1

-21.7

A

IDM

Pulsed Drain Current2

99

-93

A

EAS

Single Pulse Avalanche Energy3

528

495

mJ

IAS

Avalanche Current

26

28

A

PD@TC=25℃

Total Power Dissipation4

25

31.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

1.5

℃

/W