AP30G06GD

60V N+P-Channel Enhancement Mode MOSFET

AP30G06GD REV1.0

永源微電子科技有限公司

Description

The AP30G06GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery

protection or in other Switching application.

General Features

VDS = 60V ID =36A

RDS(ON) < 32mΩ @ VGS=10V（Type：25mΩ）

VDS = -60V ID =-29A

RDS(ON) < 58mΩ @ VGS=-10V（Type：46mΩ）

Application

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30G06GD

TO-252-4L

AP30G06GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

N-Channel

P-Channel

VDS

Drain-Source Voltage

60

-60

V

VGS

Gate-Source Voltage

±20

±20

V

ID@TA=25

℃

Continuous Drain Current, VGS @ 10V1

36

-29

A

ID@TA=70

℃

Continuous Drain Current, VGS @ 10V1

15.8

-15.3

A

IDM

Pulsed Drain Current2

105

-95

A

EAS

Single Pulse Avalanche Energy3

125.5

135.3

mJ

IAS

Avalanche Current

22.6

-26.6

A

PD@TA=25

℃

Total Power Dissipation4

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃

/W