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March 2000

M27W800

8 Mbit (1Mb x 8 or 512Kb x 16)

Low Voltage UV EPROM and OTP EPROM

s

2.7V to 3.6V LOW VOLTAGE in READ

OPERATION

s

ACCESS TIME:

s

BYTE-WIDE or WORD-WIDE

CONFIGURABLE

s

8 Mbit MASK ROM REPLACEMENT

s

LOW POWER CONSUMPTION

– Active Current 30mA at 8MHz

– Standby Current 15µA

s

PROGRAMMING VOLTAGE: 12.5V ± 0.25V

s

PROGRAMMING TIME: 50µs/word

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: B2h

DESCRIPTION

The M27W800 is a low voltage 8 Mbit EPROM of-

fered in the two ranges UV (ultra violet erase) and

OTP (one time programmable). It is ideally suited

for microprocessor systems requiring large data or

program storage. It is organised as either 1 Mbit

words of 8 bit or 512 Kbit words of 16 bit. The pin-

out is compatible with a 8 Mbit Mask ROM.

The M27W800 operates in the read mode with a

supply voltage as low as 2.7V. The decrease in

operating power allows either a reduction of the

size of the battery or an increase in the time be-

tween battery recharges.

The FDIP42W (window ceramic frit-seal package)

has a transparent lid which allows the user to ex-

pose the chip to ultraviolet light to erase the bit pat-

tern. A new pattern can then be written rapidly to

the device by following the programming proce-

dure.

For applications where the content is programmed

only one time and erasure is not required, the

M27W800 is offered in PDIP42 and PLCC44 pack-

age.

1

42

1

42

FDIP42W (F)

PDIP42 (B)

PLCC44 (K)

Figure 1. Logic Diagram

AI03601

19

A0-A18

BYTEVPP

Q0-Q14

VCC

M27W800

G

E

VSS

15

Q15A–1