AP30P01DF

-12V P-Channel Enhancement Mode MOSFET

AP30P01DF RVE1.0

永源微電子科技有限公司

Description

The AP30P01DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -12V ID =-30A

RDS(ON) < 7.2mΩ @ VGS=-4.5V （Type：5.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30P01DF

PDFN3*3-8L

AP30P01DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-12

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25℃

Continuous Drain Current, VGS @ -4.5V1

-30

A

ID@TC=70℃

Continuous Drain Current, VGS @ -4.5V1

-28

A

IDM

Pulsed Drain Current2

-110

A

PD@TC=25℃

Total Power Dissipation3

39

W

PD@TC=70℃

Total Power Dissipation3

29

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

75

℃

/W

RθJA

Thermal Resistance Junction-Ambient 1 (t ≤10s)

40

℃

/W

RθJC

Thermal Resistance Junction-Case1

4.2

℃

/W