AP40G03GD

30V N+P-Channel Enhancement Mode MOSFET

AP40G03GD REV1.0

永源微電子科技有限公司

Description

The AP40G03GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =47A

RDS(ON) < 10mΩ @ VGS=10V （Type：6.8mΩ）

VDS = -30V ID =-42A

RDS(ON) < 17mΩ @ VGS=-10V （Type：13.5mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40G03GD

TO-252-4L

AP50G03GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±20

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

47

-42

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

33

-30

A

IDM

Pulsed Drain Current2

141

-126

A

EAS

Single Pulse Avalanche Energy3

289

378

mJ

IAS

Avalanche Current

20

20

A

PD@TC=25℃

Total Power Dissipation4

43

39

W

TSTG

Storage Temperature Range

-55 to 150

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.3

℃

/W