AP40H06DF datasheet(1/7 Pages) APME

部件名	AP40H06DF

功能描述	60V NN-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP40H06DF

60V N+N-Channel Enhancement Mode MOSFET

AP40H06DF RVE1.1

永源微電子科技有限公司

Description

The AP40H06DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =40A

RDS(ON) < 32mΩ @ VGS=10V （Type：20mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40H06DF

PDFN3*3-8L

AP40H06DF XXXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

40

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

18

A

IDM

Pulsed Drain Current2

114

A

EAS

Single Pulse Avalanche Energy3

25.5

mJ

IAS

Avalanche Current

22

A

PD@TC=25℃

Total Power Dissipation4

34.7

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

3.6

℃

/W

类似零件编号 - AP40H06DF

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