ABSOLUTE MAXIMUM RATINGS

(1)

RECOMMENDED OPERATING CONDITIONS

ISO7240CF

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

DATA INPUT

DISABLE INPUT

FAILSAFE CONTROL

DATA OUTPUT

(IN)

(DISABLE)

INPUT (CTRL)

(OUT)

PU

PU

H

L or Open

X

H

PU

PU

L

L or Open

X

L

X

PU

X

H

H or Open

H

X

PU

X

H

L

L

PD

PU

X

X

H or Open

H

PD

PU

X

X

L

L

(1)

PU = Powered Up; PD = Powered Down; X = Irrelevant; H = High Level; L = Low Level

VALUE

UNIT

–0.5 to 6

V

Voltage at IN, OUT, EN

–0.5 to 6

V

Output current

±15

mA

Electrostatic discharge JEDEC Standard

Human Body Model

±4

22, Test Method A114-C.01

kV

Electrostatic

ESD

All pins

discharge

Field-Induced-Charged Device Model

JEDEC Standard 22, Test Method C101

±1

Machine Model

ANSI/ESDS5.2-1996

±200

V

Maximum junction temperature

170

°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values are with respect to network ground terminal and are peak voltage values.

MIN

TYP

MAX

UNIT

4.5

5.5

V

3

3.6

High-level output current

4

mA

Low-level output current

–4

mA

Input pulse width

40

ns

Signaling rate

0

25

Mbps

High-level input voltage (IN, DISABLE, CTRL)

2

V

Low-level input voltage (IN, DISABLE, CTRL)

0

0.8

V

Junction temperature

150

°C

External magnetic field-strength immunity per IEC 61000-4-8 and IEC

H

1000

A/m

61000-4-9 certification

(1)

Typical signaling rate under ideal conditions at 25

°C.

2

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