2N60L-A-TN3-R datasheet(3/8 Pages) UTC

3 / 8 page

2N60L

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 8

www.unisonic.com.tw

QW-R502-182,A

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD (ON)

Turn-On Rise Time

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

VDD =300V, ID =2.4A, RG=25Ω

(Note 4, 5)

Total Gate Charge

9.0

Gate-Source Charge

QGS

1.6

Gate-Drain Charge

QGD

VDS=480V, VGS=10V, ID=2.4A

(Note 4, 5)

4.3

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

1.4

Continuous Drain-Source Current

ISD

2.0

Pulsed Drain-Source Current

ISM

8.0

Reverse Recovery Time

tRR

180

Reverse Recovery Charge

QRR

VGS = 0 V, ISD = 2.4A,

di/dt = 100 A/µs (Note4)

0.72

µC

Note:

1. Repetitive Rating : Pulse width limited by TJ

2. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C

3. ISD ≤ 2.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

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