CPDUT5VMHT-HF

Mechanical data

RoHS Device

Halogen Free

Page 1

Comchip Technology CO., LTD.

QW-JP141

REV:A

SMD ESD Protection Diode

Circuit Diagram

Dimensions in inches and (millimeter)

Features

- IEC 61000-4-2 (ESD) ±30kV (air/contact)

IEC 61000-4-4 (EFT) 80A (5/50ns)

IEC 61000-4-5 (Lightning) 140A (8/20µs)

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

Reverse leakage current

IR

µA

VRWM = 5V

Clamping voltage

VC

V

IPP = 140A, TP = 8/20µs

V

Working peak reverse voltage

VRWM

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

5

6

8

396

TLP = 16A, TP = 100ns

VC

11

6

1

Clamping voltage

VC

IPP = 50A, TP = 8/20µs

V

0.065(1.65)

0.061(1.55)

0.041(1.05)

0.037(0.95)

0.024(0.60)

0.016(0.40)

0.002(0.05)

Max

0.008(0.20)

0.004(0.10)

0.043(1.10)

BSC

0.033(0.85)

0.030(0.75)

0.018(0.45)

0.014(0.35)

0.010(0.25)

0.006(0.15)

0.010(0.25)

0.006(0.15)

DFN1610-2L

- ESD/surge protection for 1 line with Bi-directional.

- High surge protection.

- Fast turn-on and low clamping voltage.

- Case: DFN1610-2L package,

molded plastic.

- Mounting position: Any.

Pin 1

Pin 2

Pin 2

13

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Storage temperature range

TSTG

°C

ESD

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

-55 to +150

±30

140

1820

TJ

°C

-55 to +150

Operating temperature range

9