AP40P03DF

-30V P-Channel Enhancement Mode MOSFET

AP40P03DF RVE1.1

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-30

-32.5

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -30V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-1.2

-1.5

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

note3

VGS= -10V, ID= -10A

-

10.5

16

mΩ

VGS= -4.5V, ID= -5A

-

16

20

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

4.9

7.0

9.1

Ω

Ciss

Input Capacitance

VDS= -24V, VGS=10V,

f=1.0MHz

-

2130

-

pF

Coss

Output Capacitance

-

280

-

pF

Crss

Reverse Transfer Capacitance

-

252

-

pF

Qg

Total Gate Charge

VDS= -24V, ID= -1A,

VGS= -10V

-

22

-

nC

Qgs

Gate-Source Charge

-

4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

5.8

-

nC

td(on)

Turn-on Delay Time

VDD= -24V, ID= -1A,

VGS= -10V, RGEN=7.0Ω

-

9

-

ns

tr

Turn-on Rise Time

-

13

-

ns

td(off)

Turn-off Delay Time

-

48

-

ns

tf

Turn-off Fall Time

-

20

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-29.5

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-44

A

VSD

Drain to Source Diode Forward

Voltage

VGS=0V, IS= -1A

-

-0.74

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175℃ junction temperature

4、EAS condition: TJ=25℃, VDD= -24V, VG= -10V, RG=7Ω, L=0.1mH, IAS= -29.5A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.