AP40P04NF

-40V P-Channel Enhancement Mode MOSFET

AP40P04NF RVE1.0

永源微電子科技有限公司

Description

The AP40P04NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -40V ID =-40 A

RDS(ON) < 18mΩ @ VGS=-10V (Type：15mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40P04NF

PDFN5*6-8L

AP40P04NF XXX YYYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-40

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-40

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-23

A

IDM

Pulsed Drain Current2

-120

A

EAS

Single Pulse Avalanche Energy3

125

mJ

PD@TC=25℃

Total Power Dissipation4

25

W

PD@TA=25℃

Total Power Dissipation4

16

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

5

℃

/W