AP40P10PIT

-100V P-Channel Enhancement Mode MOSFET

AP40P10P/T REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-100

-110

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-10A

---

38

55

mΩ

VGS=-4.5V , ID=-8A

---

50

58

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.2

-1.8

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-100V , VGS=0V , TJ=25

℃

---

---

-1

uA

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-10V , ID=-10A

---

32

---

S

Qg

Total Gate Charge

VDS=-80V

VGS=-10V

ID=-14A

---

92

---

nC

Qgs

Gate-Source Charge

---

17.5

---

Qgd

Gate-Drain Charge

---

14

---

Td(on)

Turn-On Delay Time

VDD=-50V ,

VGS=-10V

,RG=3.3Ω,

ID=-14A

---

20.5

---

ns

Tr

Rise Time

---

32.2

---

Td(off)

Turn-Off Delay Time

---

123

---

Tf

Fall Time

---

63.7

---

Ciss

Input Capacitance

VDS=-25V , VGS=0V , f=1MHz

---

6516

---

pF

Coss

Output Capacitance

---

223

---

Crss

Reverse Transfer Capacitance

---

125

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-40

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

trr

Reverse Recovery Time

IF=-14A , di/dt=-100A/µs ,

TJ=25

℃

---

31.2

---

nS

Qrr

Reverse Recovery Charge

---

31.97

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,IAS =-29A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.