AP40P15NF

-150V P-Channel Enhancement Mode MOSFET

AP40P15NF REV1.0

永源微電子科技有限公司

Description

The AP40P15NF uses advanced APM-SGT V technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -150V ID =-40A

RDS(ON) < 107mΩ @ VGS=10V (Type：87mΩ)

Application

Brushless motor

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP40P15NF

PDFN5X6-8L

AP40P15NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-150

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25

℃

Continuous Drain Current, -VGS @ -10V1

-40

A

ID@TA=70

℃

Continuous Drain Current, -VGS @ -10V1

-27.2

A

IDM

Pulsed Drain Current2

-120

A

EAS

Single Pulse Avalanche Energy3

402

mJ

IAS

Avalanche Current

48

A

PD@TA=25

℃

Total Power Dissipation4

65.8

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

25

℃

/W

RθJC

Thermal Resistance Junction-Case1

1.5

℃

/W