AP40P15PIT

-150V P-Channel Enhancement Mode MOSFET

AP40P15PIT REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ =25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

BVDSS

Drain to Source Breakdown Voltage

ID=−250 A, VGS=0V

−150

−175

−

V

IDSS

Zero Gate Voltage Drain Current

VDS=−120 V, VGS=0V

−

−

−1

nA

IGSS

Gate to Source Leakage Current

VGS=±25 V, VDS=0V

−

−

±100

nA

VGS(th)

Gate to Source Threshold Voltage

VGS=VDS, ID=−250A

−1.2

-2.0

-3.0

V

RDS(on)

Static Drain to Source On Resistance

VGS=−10V, ID=−3 A

−

87

107

mΩ

RDS(on)

Static Drain to Source On Resistance

VGS=−4.5V, ID=−2.7 A

−

90

137

mΩ

GFS

Forward Transconductance

VDS=−10V, ID=−3 A

−

12

−

S

Ciss

Input Capacitance

VDS=−75V, VGS=0V, f=1MHz

−

3254

-

pF

Coss

Output Capacitance

−

135

-

pF

Crss

Reverse Transfer Capacitance

−

10

-

pF

Rg

Gate Resistance

3

-

14

Ω

td(on)

Turn−On Delay Time

VDD=−75V, ID=−3A,

VGS=−10V, RGEN= 6

−

12

23

ns

tr

Rise Time

−

3.3

10

ns

td(off)

Turn−Off Delay Time

−

22

36

ns

tf

Fall Time

−

9.6

20

ns

VSD

Source to Drain Diode Forward Voltage

VGS = 0 V, IS = −3 A (Note 2)

−

−0.80

−1.3

V

trr

Reverse Recovery Time

IF = −3 A, di/dt = 100 A/s

−

77

123

ns

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =-120V,VGS =-10V,L=0.1mH,IAS =-48A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.