SST29EE010 datasheet(9/26 Pages) SST

9 / 26 page

304-3 6/00

1 Megabit Page-Mode EEPROM

SST29EE010 / SST29LE010 / SST29VE010

TABLE 8: CAPACITANCE (Ta = 25 °C, f=1 MHz, other pins open)

Parameter

Description

Test Condition

Maximum

CI/O(1)

I/O Pin Capacitance

VI/O = 0V

12 pF

CIN(1)

Input Capacitance

VIN = 0V

6 pF

Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

304 PGM T8.0

TABLE 9: RELIABILITY CHARACTERISTICS

Symbol

Parameter

Minimum Specification

Units

Test Method

NEND

Endurance

10,000

Cycles

JEDEC Standard A117

TDR(1)

Data Retention

100

Years

JEDEC Standard A103

VZAP_HBM(1)

ESD Susceptibility

2000

Volts

JEDEC Standard A114

Human Body Model

VZAP_MM(1)

ESD Susceptibility

200

Volts

JEDEC Standard A115

Machine Model

ILTH(1)

Latch Up

100

JEDEC Standard 78

Note:

(1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

304 PGM T9.3

TABLE 7: POWER-UP TIMINGS

Symbol

Parameter

Maximum

Units

TPU-READ(1)

Power-up to Read Operation

100

µs

TPU-WRITE(1)

Power-up to Write Operation

304 PGM T7.0

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