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M28W640CT 数据表(PDF) 23 Page - STMicroelectronics

部件名 M28W640CT
功能描述  64 Mbit 4Mb x16, Boot Block 3V Supply Flash Memory
PDF  54 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28W640CT 数据表(HTML) 23 Page - STMicroelectronics

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M28W640CT, M28W640CB
Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDDQ
±1
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤VDDQ
±10
µA
IDD
Supply Current (Read)
E =VSS,G =VIH,f = 5MHz
10
20
mA
IDD1
Supply Current (Stand-by or
Automatic Stand-by)
E =VDDQ ±0.2V,
RP =VDDQ ± 0.2V
15
50
µA
IDD2
Supply Current
(Reset)
RP =VSS ± 0.2V
15
50
µA
IDD3
Supply Current (Program)
Program in progress
VPP =12V ± 5%
10
20
mA
Program in progress
VPP =VDD
10
20
mA
IDD4
Supply Current (Erase)
Erase in progress
VPP =12V ± 5%
520
mA
Erase in progress
VPP =VDD
520
mA
IDD5
Supply Current
(Program/Erase Suspend)
E =VDDQ ±0.2V,
Erase suspended
50
µA
IPP
Program Current
(Read or Stand-by)
VPP >VDD
400
µA
IPP1
Program Current
(Read or Stand-by)
VPP ≤ VDD
5µA
IPP2
Program Current (Reset)
RP =VSS ± 0.2V
5µA
IPP3
Program Current (Program)
Program in progress
VPP =12V ± 5%
10
mA
Program in progress
VPP =VDD
5µA
IPP4
Program Current (Erase)
Erase in progress
VPP =12V ± 5%
10
mA
Erase in progress
VPP =VDD
5µA
VIL
Input Low Voltage
–0.5
0.4
V
VDDQ ≥ 2.7V
–0.5
0.8
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ +0.4
V
VDDQ ≥ 2.7V
0.7 VDDQ
VDDQ +0.4
V
VOL
Output Low Voltage
IOL = 100µA, VDD =VDD min,
VDDQ =VDDQ min
0.1
V
VOH
Output High Voltage
IOH = –100µA, VDD =VDD min,
VDDQ =VDDQ min
VDDQ –0.1
V
VPP1
Program Voltage (Program or
Erase operations)
1.65
3.6
V
VPPH
Program Voltage
(Program or Erase
operations)
11.4
12.6
V
VPPLK
Program Voltage
(Program and Erase lock-out)
1V
VLKO
VDD Supply Voltage (Program
and Erase lock-out)
2V



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