AP70G06GD

60V N+P-Channel Enhancement Mode MOSFET

AP70G06GD REV1.0

永源微電子科技有限公司

Description

The AP70G06GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =70A

RDS(ON) < 15mΩ @ VGS=10V （Type：11mΩ）

VDS = -60V ID =-78A

RDS(ON) < 22mΩ @ VGS=-10V （Type：15mΩ）

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70G06GD

TO-252-4L

AP70G06GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

60

-60

V

VGS

Gate-Source Voltage

±20

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

70

-78

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

48.5

-47.5

A

IDM

Pulsed Drain Current2

280

-304

A

EAS

Single Pulse Avalanche Energy3

289

378

mJ

IAS

Avalanche Current

24

-35

A

PD@TC=25℃

Total Power Dissipation4

46

41.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃/W

RθJC

Thermal Resistance Junction-Case1

2.3

℃/W