AP70N06HT datasheet(1/9 Pages) APME

部件名	AP70N06HT

功能描述	60V N-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP70N06HPIT

60V N-Channel Enhancement Mode MOSFET

AP70N06HP/T REV1.0

永源微電子科技有限公司

Description

The AP70N06HP/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =70A

RDS(ON) < 13mΩ @ VGS=10V （Type:9.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP70N06HP

TO-220-3L

AP70N06HP XXXX YYYY

1000

AP70N06HT

TO-263-3L

AP70N06HP XXXX YYYY

1000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

60

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

70

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

30

A

IDM

Pulsed Drain Current2

90

A

EAS

Single Pulse Avalanche Energy3

89

mJ

IAS

Avalanche Current

25

A

PD@TC=25

℃

Total Power Dissipation4

45

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

2.8

℃/W

类似零件编号 - AP70N06HT

制造商	部件名	数据表	功能描述
A POWER MICROELECTRONIC...	AP70N06HD	1Mb / 7P	60V N-Channel Enhancement Mode MOSFET

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