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M29F002BT 数据表(PDF) 1 Page - STMicroelectronics |
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M29F002BT 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 22 page ![]() 1/22 April 2002 M29F002BT, M29F002BNT M29F002BB, M29F002BNB 2 Mbit (256Kb x8, Boot Block) Single Supply Flash Memory s SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45 ns s PROGRAMMING TIME – 8 µs by Byte typical s 7 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 4 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Top Device Code M29F002BT: B0h – Top Device Code M29F002BNT: B0h – Bottom Device Code M29F002BB: 34h – Bottom Device Code M29F002BNB: 34h 32 1 TSOP32 (N) 8 x 20mm PLCC32 (K) PDIP32 (P) Figure 1. Logic Diagram AI02957B 18 A0-A17 W DQ0-DQ7 VCC M29F002BT M29F002BB M29F002BNT M29F002BNB E VSS 8 G RP |
类似零件编号 - M29F002BT |
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类似说明 - M29F002BT |
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