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JSST108 数据表(PDF) 3 Page - Vishay Siliconix

部件名 JSST108
功能描述  N-Channel JFETs
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

JSST108 数据表(HTML) 3 Page - Vishay Siliconix

  JSST108 Datasheet HTML 1Page - Vishay Siliconix JSST108 Datasheet HTML 2Page - Vishay Siliconix JSST108 Datasheet HTML 3Page - Vishay Siliconix JSST108 Datasheet HTML 4Page - Vishay Siliconix JSST108 Datasheet HTML 5Page - Vishay Siliconix JSST108 Datasheet HTML 6Page - Vishay Siliconix  
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J/SST108 Series
Vishay Siliconix
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
40
–55
25
125
32
24
16
8
0
–15
85
–35
5
45
65
105
20
0
–8
–10
–4
8
4
0
50
20
10
0
1
10
100
1000
800
400
200
0
16
12
600
40
30
–2
–6
5
0
–6
–8
–10
4
3
2
1
0
30
015
20
10
525
24
18
12
6
0
–2
–4
100
06
8
10
40
20
0
80
60
24
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
Turn-On Switching
Turn-Off Switching
On-Resistance vs. Temperature
Output Characteristics
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
TA – Temperature (_C)
VDS – Drain-Source Voltage (V)
VGS(off) – Gate-Source Cutoff Voltage (V)
ID – Drain Current (mA)
rDS @ ID = 10 mA, VGS = 0 V
IDSS @ VDS = 15 V, VGS = 0 V
IDSS
rDS
TA = 25_C
VGS(off) = –2 V
–4 V
–8 V
VGS(off) = –2 V
–4 V
–8 V
ID = 10 mA
rDS changes X 0.7%/_C
V
GS
= 0 V
tr approximately independent of ID
VDD = 1.5 V, RG = 50 Ω
VGS(L) = –10 V
td(on) @ ID = 25 mA
td(on) @ ID = 10 mA
tr
td(off)
VGS(off) = –2 V
td(off) independent
of device VGS(off)
VDD = 1.5 V, VGS(L) = –10 V
VGS(off) = –8 V
–0.4 V
–0.6 V
–0.8 V
–0.2 V
VGS(off) = –2 V
tf



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