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STPS1645D 数据表(PDF) 2 Page - STMicroelectronics |
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STPS1645D 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 4 page ![]() STPS1645D 2/4 Symbol Parameter Value Unit Rth (j-c) Junction to case 1.6 °C/W THERMAL RESISTANCES Symbol Parameter Tests Conditions Min. Typ. Max. Unit IR * Reverse leakage current Tj = 25°C VR =VRRM 200 µA Tj = 125°C 11 40 mA VF * Forward voltage drop Tj = 125°C IF = 16 A 0.5 0.57 V STATIC ELECTRICAL CHARACTERISTICS Pulse test : * tp = 380 µs, δ <2% To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.01 IF 2 (RMS) 0 2 4 6 8 10 12 14 16 18 0 2 4 6 8 10 12 IF(av) (A) PF(av)(W) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 T δ=tp/T tp Fig. 1: Average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 Tamb(°C) IF(av)(A) Rth(j-a)=Rth(j-c) Rth(j-a)=15°C/W TO-220AC T δ=tp/T tp Fig. 2: Average current versus ambient temperature ( δ : 0.5). 1E-3 1E-2 1E-1 1E+0 0 20 40 60 80 100 120 140 160 180 200 t(s) IM(A) Tc=75°C Tc=100°C Tc=125°C IM t δ=0.5 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values). 1E-4 1E-3 1E-2 1E-1 1E+0 0.0 0.2 0.4 0.6 0.8 1.0 tp(s) Zth(j-c)/Rth(j-c) T δ=tp/T tp Single pulse δ = 0.1 δ = 0.2 δ = 0.5 Fig. 4: Relative variation of thermal transient im- pedance junction to case versus pulse duration. |
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