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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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M28W640 数据表(PDF) 26 Page - STMicroelectronics |
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M28W640 数据表(HTML) 26 Page - STMicroelectronics |
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26 / 54 page  M28W640CT, M28W640CB 26/54 Table 16. Write AC Characteristics, Write Enable Controlled Note: 1. Sampled only, not 100% tested. 2. Applicable if VPP is seen as a logic input (VPP <3.6V). Symbol Alt Parameter M28W640C Unit 80 90 tAVAV tWC Write Cycle Time Min 80 90 ns tAVWH tAS Address Valid to Write Enable High Min 45 50 ns tDVWH tDS Data Valid to Write Enable High Min 45 50 ns tELWL tCS Chip Enable Low to Write Enable Low Min 0 0 ns tELQV Chip Enable Low to Output Valid Min 80 90 ns tQVVPL (1,2) Output Valid to VPP Low Min 0 0 ns tQVWPL Output Valid to Write Protect Low Min 0 0 ns tVPHWH (1) tVPS VPP High to Write Enable High Min 200 200 ns tWHAX tAH Write Enable High to Address Transition Min 0 0 ns tWHDX tDH Write Enable High to Data Transition Min 0 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 0 ns tWHEL Write Enable High to Chip Enable Low Min 25 30 ns tWHGL Write Enable High to Output Enable Low Min 20 30 ns tWHWL tWPH Write Enable High to Write Enable Low Min 25 30 ns tWLWH tWP Write Enable Low to Write Enable High Min 45 50 ns tWPHWH Write Protect High to Write Enable High Min 45 50 ns |
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