Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Emitter cut-off current

100

V

V

V

nA

V(BR)CEO

V(BR)CBO

V(BR)EBO

IEBO

IC = 10mA, IB = 0

IC = 100μA, IE = 0

IE = 100μA, IC = 0

VCES = 320V

Min

400

400

5

Collector-emitter cut-off current

DC current gain

100

300

ICES

hFE(1)

VEB = 4V

100

hFE(2)

100

Collector cut-off current

100

ICBO

VCB = 320V

VCE = 10V, IC = 1mA

VCE = 10V, IC = 50mA

nA

nA

hFE(3)

VCE = 10V, IC = 100A

15

Collector-emitter saturation voltage

0.2

V

VCE(sat)1

IC = 20mA, IB = 2mA

VCE(sat)2

IC = 50mA, IB = 6mA

Base-emitter saturation voltage

0.9

V

VBE(sat)

Transition frequency

fT

VCE = 20V, IC = 10mA, f = 20MHz

50

MHz

IC = 50mA, IB = 5mA

Base-emitter turn-on voltage

Collector output capacitance

Cob

VBE(on)

IC = 50mA, VCE = 10V

VCB = 20V, f = 1MHz

V

pF

5

0.9

0.5

QW-JTR126

Page 2

REV:A

Company reserves the right to improve product design , functions and reliability without notice.

Comchip Technology CO., LTD.

Silicon Planar High Voltage Transistor