Electrical Characteristics (at TA=25°C unless otherwise noted)

General Purpose Transistor

Collector-base breakdown voltage

Collector-emitter breakdown voltage (Note 2)

Emitter-base breakdown voltage

Base-emitter saturation voltage

(Note 2)

Transition frequency

Turn-on time

Turn-off time

Units

Symbol

Parameter

Min.

Conditions

IC = 100μA, IE = 0

IC = 10mA, IB = 0

IE = 100μA, IC = 0

IC = 0.1A, IB = 10mA

IC = 1A, IB = 10mA

IB1 = -IB2 = 10mA

VCC = 10V, IC = 1A

Max.

V(BR)CBO

VCE(sat)2

fT

t(on)

t(off)

V(BR)CEO

V(BR)EBO

VBE(sat)

50

50

5

100

DC current gain

(Note 2)

VCE = 2V, IC = 1A

VCE = 2V, IC = 0.2A

VCE = 2V, IC = 2A

100

300

200

40

20

1

1

170

750

V

V

V

mV

V

Collector cut-off current

Emitter cut-off current

VCB = 40V, IE = 0

VEB = 4V, IC = 0

ICBO

IEBO

100

100

nA

nA

MHz

nS

nS

hFE(4)

hFE(1)

hFE(2)

hFE(3)

VCE = 2V, IC = 10mA

200

hFE(5)

VCE = 2V, IC = 6A

VCE(sat)1

VCE(sat)3

IC = 2A, IB = 100mA

200

220

Collector-emitter saturation voltage (Note 2)

VBE(on)

Base-emitter on voltage

(Note 2)

IC = 2A, IB = 50mA

IC = 2A, VCE = 2V

VCB = 10V, f = 1MHz

Output capacitance

Cob

V

20

pF

Typ.

mV

mV

Comchip Technology CO., LTD.

QW-JTR151

Page 2

REV:A

VCE = 10V, IC = 50mA, f = 100MHz

Notes: 1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm.

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2.0%.