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AP140N15P 数据表(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP140N15P 数据表(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page ![]() AP140N15PIT 150V N-Channel Enhancement Mode MOSFET AP140N15P/T REV1.0 永源微電子科技有限公司 Description The AP140N15P/T uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 150V ID =140A RDS(ON) < 9mΩ @ VGS=10V (Type:7.4mΩ) Application DC/DC Converter Power Management Switches Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP140N15P TO-220-3L AP140N15P XXX YYYY 1000 AP140N15T TO-263-3L AP140N15T XXX YYYY 800 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ±20 V ID@TC=25 ℃ Continuous Drain Current, VGS @ 10V 140 A ID@TC=100 ℃ Continuous Drain Current, VGS @ 10V 60 A IDM Pulsed Drain Current 520 A EAS Single Pulse Avalanche Energy 506 mJ IAS Avalanche Current 65 A PD@TC=25 ℃ Total Power Dissipation4 179 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 25 ℃/W RθJC Thermal Resistance Junction-Case 0.75 ℃ /W |
类似零件编号 - AP140N15P |
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类似说明 - AP140N15P |
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