MP2321 – 19V, 2A, LOW IQ, STEP-DOWN CONVERTER

MP2321 Rev. 1.1

www.MonolithicPower.com

4

5/24/2019

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© 2019 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VIN = 12V, TJ = -40°C to +125°C (7), typical value is tested at TJ = +25°C, unless otherwise

noted.

Parameters

Symbol

Condition

Min

Typ

Max

Units

Supply current (shutdown)

IIN

VEN = 0V

0.1

1

μA

Supply current (quiescent)

IQ

VEN = 5V, VFB = 0.7V,

TJ = 25°C

40

55

μA

VIN under-voltage lockout

threshold rising

INUVVth

3.5

3.7

3.9

V

VIN under-voltage lockout

threshold hysteresis

INUVHYS

200

mV

HS switch on resistance

HSRDS(ON)

110

mΩ

LS switch on resistance

LSRDS(ON)

40

mΩ

Switch leakage

SWLKG

VEN = 0V, VSW = 0V or 12V

0

1

μA

High-side MOSFET current limit

ILIMIT

Duty = 40%, TJ = -40°C to

+125°C

2.7

4

6

A

Duty = 40%, TJ = 25°C

3

4

6

Low-Side MOSFET current limit

ILIMIT

PWM mode, sink current

1.5

A

One-shot on timer (8)

TON

RREQ = 180k from

FREQ/MODE to GND

230

ns

Minimum on time (8)

TON_min

90

ns

Minimum off time

TOFF_min

150

ns

Feedback voltage

VFB

TJ = -40°C to +125°C

591

600

609

mV

TJ = 25°C

594

600

606

Feedback current

IFB

VFB = 700mV

10

50

nA

Soft-start current

ISS

4

8

11

μA

EN input high voltage

1.6

V

EN input low voltage

0.4

V

EN input current

IEN

VEN = 2V

2

μA

VEN = 0V

0

Power good UV rising threshold

PGUVVth_Hi

0.9

VFB

Power good UV falling threshold

PGUVVth_Lo

0.85

VFB

Power good OV rising threshold

PGOVVth_Hi

1.2

1.3

1.4

VFB

Power good OV falling threshold

PGOVVth_Lo

1

1.1

1.2

VFB

Power good delay

PGTd

140

μs

Power good sink current

capability

VPG

Sink 1mA

0.4

V

Power good leakage current

IPG_LEAK

VPG = 3.3V

50

nA

Thermal shutdown (8)

TSD

150

°C

Thermal shutdown hysteresis (8)

TSD_HYS

20

°C

NOTES:

7) Not tested in production. Guaranteed by over-temperature correlation.

8) Not tested in production. Guaranteed by design and engineering sample characterization test.