AP150P02D

-20V P-Channel Enhancement Mode MOSFET

AP150P02D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Type

Max

Units

VDS

Drain-source breakdown voltage

VGS=0V, ID = -250μA

-20

-

-

V

IGSS

Gate-source leakage

VDS=0V, VGS=±12V

-

-

± 100

nA

IDSS

Zero gate voltage drain current

VDS=-20V, VGS=0V

-

-

-1

μA

VGS(th)

Gate-source threshold voltage

VDS=VGS, ID=-250μA

-0.5

-0.7

-1.2

V

RDS(on)

Drain-source on-state resistance

VGS=-4.5V, ID=-20A

-

2.1

2.5

mΩ

VGS=-2.5V, ID=-15A

-

2.6

3.2

gfs

Forward transconductance a

VDS=-10V, ID=-25A

-

120

-

S

Rg

Gate resistance

f=1MHz

-

1.5

2.5

Ω

Ciss

Input capacitance

VDS=-10V, VGS=0V, f=1MHz

-

22000

-

pF

Coss

Output capacitance

-

2470

-

pF

Crss

Reverse transfer capacitance

-

2515

-

pF

Qgs

Gate-source charge

VDS=-10V, VGS=-4.5V,

ID =-20A

-

32.5

-

nC

Qgd

Gate-drain charge

-

51.5

-

nC

Qg

Total gate charge

VDS=-10V, VGS=-10V, ID=20A

-

202.5

nC

td(on)

Turn-on delay time

VDD=-10V, RL=1Ω

VGEN=-4.5V, Rg=1Ω

-

20

40

ns

tr

Rise time

-

14

28

ns

td(on)

Turn-on delay time

-

115

200

ns

td(off)

Turn-off delay time

-

230

390

ns

IS

Continuous source-drain diode current

TC = 25 °C

-

-

-150

A

ISM

Pulse diode forward current

-

-

-450

A

VSD

Body diode voltage

IS = -5 A, VGS = 0 V

-

-0.64

-1.1

V

trr

Body diode reverse recovery time

IF=-10A, di/dt=100A/μs,

TJ =25°C

-

88

140

ns

Qrr

Body diode reverse recovery charge

-

120

200

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=-16V,VGS=-4.5V,L=0.1mH,IAS=-50A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.