STM32F101T4U6ATR datasheet(49/87 Pages) STMICROELECTRONICS

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STM32F101x4, STM32F101x6

Electrical characteristics

5.3.9

Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 85 °C unless otherwise specified.

5.3.10

EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (Electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•

Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•

FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

tLOCK

PLL lock time

200

µs

Jitter

Cycle-to-cycle jitter

300

1. Based on device characterization, not tested in production.

2. Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with

the range defined by fPLL_OUT.

Table 26. PLL characteristics (continued)

Symbol

Parameter

Value

Unit

Min(1)

Typ

Max(1)

Table 27. Flash memory characteristics

Symbol

Parameter

Conditions

Min(1)

1. Guaranteed by design, not tested in production.

Typ

Max(1)

Unit

tprog

16-bit programming time

TA = –40 to +85 °C

52.5

µs

tERASE

Page (1 KB) erase time

TA = –40 to +85 °C

tME

Mass erase time

TA = –40 to +85 °C

IDD

Supply current

Read mode

fHCLK = 36 MHz with 1 wait

state, VDD = 3.3 V

Write / Erase modes

fHCLK = 36 MHz, VDD = 3.3 V

Power-down mode / Halt,

VDD = 3.0 to 3.6 V

µA

Vprog

Programming voltage

3.6

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