AP150P03D

-30V P-Channel Enhancement Mode MOSFET

AP150P03D REV1.0

永源微電子科技有限公司

Description

The AP150P03D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -30V ID =-150A

RDS(ON) <3.2mΩ @ VGS=-10V （Type：2.3mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150P03D

TO-252-3L

AP150P03D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ -10V1

-150

A

ID@TC=100℃

Continuous Drain Current, VGS @ -10V1

-125

A

IDM

Pulsed Drain Current2

-540

A

EAS

Single Pulse Avalanche Energy3

650

mJ

IAS

Avalanche Current

-70

A

PD@TC=25℃

Total Power Dissipation4

300

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

0.47

℃

/W