AP150P06T datasheet(1/9 Pages) APME

部件名	AP150P06T

功能描述	-60V P-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP150P06PIT

-60V P-Channel Enhancement Mode MOSFET

AP150P06P/T RVE 1.0

永源微電子科技有限公司

Description

The AP150P06P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 6V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -60V ID =-150A

RDS(ON) < -4.7mΩ @ VGS=-10V (Type：3.7mΩ)

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150P06P

TO-220-3L

AP150P06P XXX YYYY

1000

AP150P06T

TO-263-3L

AP150P06T XXX YYYY

800

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-60

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, -VGS @ -10V1

-150

A

ID@TC=100℃

Continuous Drain Current, -VGS @ -10V1

-90

A

IDM

Pulsed Drain Current2

-600

A

EAS

Single Pulse Avalanche Energy3

1020

mJ

IAS

Avalanche Current

82

A

PD@TC=25℃

Total Power Dissipation4

350

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

0.9

℃

/W

RθJC

Thermal Resistance Junction-Case1

60

℃

/W

类似零件编号 - AP150P06T

制造商	部件名	数据表	功能描述
A POWER MICROELECTRONIC...	AP150P01NF	843Kb / 7P	-18V P-Channel Enhancement Mode MOSFET REV1.0
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	AP150P03D	734Kb / 7P	-30V P-Channel Enhancement Mode MOSFET REV1.0
	AP150P03NF	1Mb / 7P	-30V P-Channel Enhancement Mode MOSFET

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