DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M

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Vishay General Semiconductor

Revision: 16-Aug-13

1

Document Number: 88571

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Miniature Glass Passivated Single-Phase Bridge Rectifiers

FEATURES

• UL recognition, file number E54214

• Ideal for printed circuit boards

• Applicable for automative insertion

• High surge current capability

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for SMPS, lighting ballaster, adapter, battery charger, home

appliances, office equipment, and telecommunication

applications.

MECHANICAL DATA

Case: DFM

Molding compound meets UL 94 V-0 flammability rating



Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked on body

PRIMARY CHARACTERISTICS

Package

DFM

IF(AV)

1 A

VRRM

50 V, 100 V, 200 V, 400 V, 600 V,

800 V, 1000 V

IFSM

50 A

IR

5 μA

VF at IF = 1.0 A

1.1 V

TJ max.

150 °C

Diode variations

Quad

~

~

Case Style DFM

~

~

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL DF005M

DF01M

DF02M

DF04M

DF06M

DF08M

DF10M

UNIT

Device marking code

DF005

DF01

DF02

DF04

DF06

DF08

DF10

Maximum repetitive peak reverse voltage

VRRM

50

100

200

400

600

800

1000

V

Maximum RMS voltage

VRMS

35

70

140

280

420

560

700

V

Maximum DC blocking voltage

VDC

50

100

200

400

600

800

1000

V

Maximum average forward output rectified current

at TA = 40 °C

IF(AV)

1.0

A

Peak forward surge current single sine-wave

superimposed on rated load

IFSM

50

A

Rating for fusing (t < 8.3 ms)

I2t10

A2s

Operating junction and storage temperature range

TJ, TSTG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL DF005M DF01M DF02M DF04M DF06M DF08M DF10M UNIT

Maximum instantaneous

forward voltage drop per diode

1.0 A

VF

1.1

V

Maximum reverse current at

rated DC blocking voltage per

diode

TA = 25 °C

IR

5.0

μA

TA = 125 °C

500

Typical junction capacitance

per diode

4.0 V, 1 MHz

CJ

25

pF