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D2TO020C27000FRE3 数据表(PDF) 3 Page - Vishay Siliconix

部件名 D2TO020C27000FRE3
功能描述  Surface Mount Power Resistor Thick Film Technology
PDF  6 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

D2TO020C27000FRE3 数据表(HTML) 3 Page - Vishay Siliconix

  D2TO020C27000FRE3 Datasheet HTML 1Page - Vishay Siliconix D2TO020C27000FRE3 Datasheet HTML 2Page - Vishay Siliconix D2TO020C27000FRE3 Datasheet HTML 3Page - Vishay Siliconix D2TO020C27000FRE3 Datasheet HTML 4Page - Vishay Siliconix D2TO020C27000FRE3 Datasheet HTML 5Page - Vishay Siliconix D2TO020C27000FRE3 Datasheet HTML 6Page - Vishay Siliconix  
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D2TO20
www.vishay.com
Vishay Sfernice
Revision: 17-Mar-16
3
Document Number: 51055
For technical questions, contact: sferfixedresistors@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CHOICE OF THE BOARD
The user must choose the board according to the working conditions of the component (power, room temperature). Maximum
working temperature must not exceed 175 °C. The dissipated power is simply calculated by the following ratio:
P:
Expressed in W
T:
Difference between maximum working temperature and room temperature or fluid cooling temperature
RTH (j - c): Thermal resistance value measured between resistive layer and outer side of the resistor. It is the thermal resistance
of the component: 6.5 °C/W.
RTH (c - h): Thermal resistance value measured between outer side of the resistor and upper side of the board. This is the thermal
resistance of the solder layer.
RTH (h - a): Thermal resistance of the board.
Example:
RTH (c - h) + RTH (h - a) for D2TO20 power rating 2.5 W at ambient temperature +25 °C.
Thermal resistance RTH (j - c): 6.5 °C/W
Considering equation (1) we have:
T = 155 °C - 25 °C = 130 °C
RTH (j - c) + RTH (c - h) + RTH (h - a) = T/P = 130/2.5 = 52 °C/W
RTH (c - h) + RTH (h - a) = 52 °C/W - 6.5 °C/W = 45.5 °C/W
Single Pulse:
These informations are for a single pulse on a cold resistor at 25 °C (not already used for a dissipation) and for pulses of
100 ms maximum duration.
The formula used to calculate E is:
with:
E (J): Pulse energy
P (W): Pulse power
t (s): Pulse duration
U (V): Pulse voltage
R (W): Resistor
The energy calculated must be less than that allowed by the graph.
P
T
R
TH (j - c)
R
TH (c - h)
R
TH (h - a)
++
-------------------------------------------------------------------------------------------
1

=
E
P x t
U
2
R
--------
x t
==



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