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M28W800 数据表(PDF) 12 Page - STMicroelectronics |
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M28W800 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 42 page ![]() M28W800BT, M28W800BB 12/42 commands will be ignored. Typical Program times are given in Table 6, Program, Erase Times and Program/Erase Endurance Cycles. Programming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program operation is aborted, the block containing the memory location must be erased and repro- grammed. See Appendix C, Figure 16, Program Flowchart and Pseudo Code, for the flowchart for using the Program command. Double Word Program Command This feature is offered to improve the programming throughput, writing a page of two adjacent words in parallel.The two words must differ only for the address A0. Programming should not be attempt- ed when VPP is not at VPPH. The command can be executed if VPP is below VPPH but the result is not guaranteed. Three bus write cycles are necessary to issue the Double Word Program command. s The first bus cycle sets up the Double Word Program command. s The second bus cycle latches the Address and the Dataof the first wordtobe written. s The third bus cycle latches the Address and the Data of the second word to be written and starts the Program/Erase Controller. Read operations output the Status Register con- tent after the programming has started. Program- ming aborts if Reset goes to VIL. As data integrity cannot be guaranteed when the program opera- tion is aborted, the block containing the memory location must be erased and reprogrammed. See Appendix C, Figure 17, Double Word Pro- gram Flowchart and Pseudo Code, for the flow- chart for using the Double Word Program command. Clear Status Register Command The Clear Status Register command can be used to reset bits 1, 3, 4 and 5 in the Status Register to ‘0’. One bus write cycle is required to issue the Clear Status Register command. The bits in the Status Register do not automatical- ly return to ‘0’ when a new Program or Erase com- mand is issued. The error bits in the Status Register should be cleared before attempting a new Program or Erase command. Program/Erase Suspend Command The Program/Erase Suspend command is used to pause a Program or Erase operation. One bus write cycle is required to issue the Program/Erase command and pause the Program/Erase control- ler. During Program/Erase Suspend the Command In- terface will accept the Program/Erase Resume, Read Array, Read Status Register, Read Electron- ic Signature and Read CFI Query commands. Ad- ditionally, if the suspend operation was Erase then the Program command will also be accepted. Only the blocks not being erased may be read or pro- grammed correctly. During a Program/Erase Suspend, the device can be placed in a pseudo-standby mode by taking Chip Enable to VIH. Program/Erase is aborted if Reset turns to VIL. See Appendix C, Figure 18, Program Suspend & Resume Flowchart and Pseudo Code, and Figure 20, Erase Suspend & Resume Flowchart and Pseudo Code for flowcharts for using the Program/ Erase Suspend command. Program/Erase Resume Command The Program/Erase Resume command can be used to restart the Program/Erase Controller after a Program/Erase Suspend operation has paused it. One Bus Write cycle is required to issue the command. Once the command is issued subse- quent Bus Read operations read the Status Reg- ister. See Appendix C, Figure 18, Program or Double Word Program Suspend & Resume Flowchart and Pseudo Code, and Figure 20, Erase Suspend & Resume Flowchart and Pseudo Code for flow- charts for using the Program/Erase Resume com- mand. Block Protection Two parameter/lockable blocks (blocks #0 and #1) can be protected against Program or Erase oper- ations. Unprotected blocks can be programmed or erased. To protect the two lockable blocks set Write Pro- tect to VIL. When VPP is below VPPLK all blocks are protected. Any attempt to Program or Erase pro- tected blocks will abort, the data in the block will not be changed and the Status Register outputs the error. Table 5, Memory Blocks Protection Truth Table, defines the protection methods. |
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