M29W102BT datasheet(1/20 Pages) STMICROELECTRONICS

部件名	M29W102BT

功能描述	1 Mbit 64Kb x16, Boot Block Low Voltage Single Supply Flash Memory

PDF	20 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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March 2000

M29W102BT

M29W102BB

1 Mbit (64Kb x16, Boot Block)

Low Voltage Single Supply Flash Memory

s

SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

s

ACCESS TIME: 50ns

s

PROGRAMMING TIME

– 10µs per Word typical

s

5 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 2 Main Blocks

s

PROGRAM/ERASE CONTROLLER

– Embedded Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

s

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

s

UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

s

TEMPORARY BLOCK UNPROTECTION

MODE

s

LOW POWER CONSUMPTION

– Standby and Automatic Standby

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

s

M28F102 COMPATIBLE

– Pin-out and Read Mode

s

20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W102BT: 0099h

– Bottom Device Code M29W102BB: 0098h

TSOP40 (N)

10 x 14mm

Figure 1. Logic Diagram

AI02785

16

A0-A15

W

DQ0-DQ15

VCC

M29W102BT

M29W102BB

E

VSS

16

G

RP

类似零件编号 - M29W102BT

制造商	部件名	数据表	功能描述
Numonyx B.V	M29W128FH	1Mb / 78P	128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
	M29W128FH60N6E	1Mb / 78P	128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
	M29W128FH60N6F	1Mb / 78P	128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
	M29W128FH60ZA6E	1Mb / 78P	128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
	M29W128FH60ZA6F	1Mb / 78P	128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory

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类似说明 - M29W102BT

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