TS4962M datasheet(9/41 Pages) STMICROELECTRONICS

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TS4962M

Electrical characteristics

9/41

Table 6.

VCC = +3.6V, GND = 0V, VIC = 2.5V, Tamb = 25°C (unless otherwise specified)

(1)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

ICC

Supply current

No input signal, no load

2.8

ISTBY

Standby current (2)

No input signal, VSTBY = GND

1000

VOO

Output offset voltage

No input signal, RL =8Ω

325

Pout

Output power

G=6dB

THD = 1% max, F = 1kHz, RL =4Ω

THD = 10% max, F = 1kHz, RL =4Ω

THD = 1% max, F = 1kHz, RL =8Ω

THD = 10% max, F = 1kHz, RL =8Ω

1.15

1.51

0.7

0.9

THD + N

Total harmonic

distortion + noise

Pout = 500mWRMS, G = 6dB, 20Hz < F< 20kHz

RL =8Ω + 15µH, BW < 30kHz

Pout = 500mWRMS, G = 6dB, F = 1kHz,

RL =8Ω + 15µH, BW < 30kHz

0.27

Efficiency Efficiency

Pout =1WRMS, RL =4Ω +≥ 15µH

Pout =0.65WRMS, RL =8Ω+≥ 15µH

PSRR

Power supply

rejection ratio with

inputs grounded (3)

F = 217Hz, RL =8Ω, G=6dB,

Vripple = 200mVpp

CMRR

Common mode

rejection ratio

F = 217Hz, RL =8Ω, G= 6dB,

ΔVicm = 200mVpp

Gain

Gain value

Rin in kΩ

V/V

RSTBY

Internal resistance

from Standby to GND

273

300

327

FPWM

Pulse width modulator

base frequency

180

250

320

kHz

SNR

Signal to noise ratio

A-weighting, Pout = 0.6W, RL =8Ω

tWU

Wake-uptime

tSTBY

Standby time

273k

-----------------

300k

-----------------

327k

-----------------

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